Infineon Technologies - BSS806NEH6327XTSA1

KEY Part #: K6405091

BSS806NEH6327XTSA1 Bei (USD) [907269pcs Hisa]

  • 1 pcs$0.04077
  • 3,000 pcs$0.03385

Nambari ya Sehemu:
BSS806NEH6327XTSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 20V 2.3A SOT23.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Viwango - Rectifiers - Moja, Transistors - IGBTs - Moduli, Transistors - JFETs, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - RF and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSS806NEH6327XTSA1 Sifa za Bidhaa

Nambari ya Sehemu : BSS806NEH6327XTSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 20V 2.3A SOT23
Mfululizo : Automotive, AEC-Q101, HEXFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2.3A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 1.8V, 2.5V
Njia ya Kutumia (Max) @ Id, Vgs : 57 mOhm @ 2.3A, 2.5V
Vgs (th) (Max) @ Id : 0.75V @ 11µA
Malango ya Lango (Qg) (Max) @ Vgs : 1.7nC @ 2.5V
Vgs (Max) : ±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 529pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 500mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-23-3
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3