Micron Technology Inc. - MT29F2G08ABBEAH4-IT:E TR

KEY Part #: K939407

MT29F2G08ABBEAH4-IT:E TR Bei (USD) [25024pcs Hisa]

  • 1 pcs$2.00029
  • 1,000 pcs$1.99034

Nambari ya Sehemu:
MT29F2G08ABBEAH4-IT:E TR
Mzalishaji:
Micron Technology Inc.
Maelezo ya kina:
IC FLASH 2G PARALLEL 63VFBGA. NAND Flash SLC 2G 256MX8 FBGA
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: ICs Maalum, Maingiliano - Maalum, PMIC - Marejeo ya Voltage, PMIC - Taa, Kidhibiti cha Ballast, Maingiliano - Serializer, Deseriizer, PMIC - V / F na waongofu wa F / V, Kumbukumbu - Proms za Usanidi kwa FPGAs and Chips za IC ...
Faida ya Ushindani:
We specialize in Micron Technology Inc. MT29F2G08ABBEAH4-IT:E TR electronic components. MT29F2G08ABBEAH4-IT:E TR can be shipped within 24 hours after order. If you have any demands for MT29F2G08ABBEAH4-IT:E TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MT29F2G08ABBEAH4-IT:E TR Sifa za Bidhaa

Nambari ya Sehemu : MT29F2G08ABBEAH4-IT:E TR
Mzalishaji : Micron Technology Inc.
Maelezo : IC FLASH 2G PARALLEL 63VFBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Non-Volatile
Fomati ya kumbukumbu : FLASH
Teknolojia : FLASH - NAND
Saizi ya kumbukumbu : 2Gb (256M x 8)
Usafirishaji wa Saa : -
Andika Wakati wa Msaada - Neno, Ukurasa : -
Wakati wa Upataji : -
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.95V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 63-VFBGA
Kifurushi cha Kifaa cha Mtoaji : 63-VFBGA

Unaweza pia Kuvutiwa Na
  • CAV25M01YE-GT3

    ON Semiconductor

    IC EEPROM 1M SPI 10MHZ 8TSSOP. EEPROM 1 Mb SPI Serial CMOS EEPROM

  • W94AD2KBJX5E

    Winbond Electronics

    IC DRAM 1G PARALLEL 90VFBGA. DRAM 1G mDDR, x32, 200MHz

  • W9864G2JB-6I

    Winbond Electronics

    IC DRAM 64M PARALLEL 90TFBGA. DRAM 64M, SDR SDRAM, x32, 166MHz, Ind temp

  • W632GG8MB12I

    Winbond Electronics

    IC DRAM 2G PARALLEL 800MHZ.

  • W632GU8MB12I

    Winbond Electronics

    IC DRAM 2G PARALLEL 800MHZ.

  • W632GU8MB15I

    Winbond Electronics

    IC DRAM 2G PARALLEL 667MHZ.