Diodes Incorporated - DMN3110S-7

KEY Part #: K6405192

DMN3110S-7 Bei (USD) [457093pcs Hisa]

  • 1 pcs$0.08132
  • 3,000 pcs$0.08092

Nambari ya Sehemu:
DMN3110S-7
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET N-CH 30V 2.5A SOT-23.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Transistors - Ushirikiano uliopangwa, Thyristors - SCRs - Moduli, Transistors - IGBTs - Moduli, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - RF, Viwango - Bridge Rectifiers and Transistors - FET, MOSFETs - RF ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMN3110S-7 electronic components. DMN3110S-7 can be shipped within 24 hours after order. If you have any demands for DMN3110S-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3110S-7 Sifa za Bidhaa

Nambari ya Sehemu : DMN3110S-7
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET N-CH 30V 2.5A SOT-23
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2.5A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 73 mOhm @ 3.1mA, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 8.6nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 305.8pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 740mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-23
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3