Nambari ya Sehemu :
PMZB370UNE,315
Mzalishaji :
Nexperia USA Inc.
Maelezo :
MOSFET N-CH 30V 0.9A DFN1006B-3
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
900mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.8V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
490 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id :
1.05V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
1.16nC @ 15V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
78pF @ 25V
Kuondoa Nguvu (Max) :
360mW (Ta), 2.7W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DFN1006B-3
Kifurushi / Kesi :
3-XFDFN