ON Semiconductor - NSVMSB1218A-RT1G

KEY Part #: K6380216

NSVMSB1218A-RT1G Bei (USD) [2024272pcs Hisa]

  • 1 pcs$0.01827
  • 15,000 pcs$0.01553

Nambari ya Sehemu:
NSVMSB1218A-RT1G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
TRANS PNP BIPOLAR SOT323-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja, Thyristors - SCRs - Moduli, Transistors - JFETs, Thyristors - TRIAC, Viwango - Zener - Moja, Transistors - FET, MOSFETs - Arrays and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
We specialize in ON Semiconductor NSVMSB1218A-RT1G electronic components. NSVMSB1218A-RT1G can be shipped within 24 hours after order. If you have any demands for NSVMSB1218A-RT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSVMSB1218A-RT1G Sifa za Bidhaa

Nambari ya Sehemu : NSVMSB1218A-RT1G
Mzalishaji : ON Semiconductor
Maelezo : TRANS PNP BIPOLAR SOT323-3
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya Transistor : PNP
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 45V
Vce Saturdayation (Max) @ Ib, Ic : 500mV @ 10mA, 100mA
Sasa - Ushuru Mtoaji : 100µA
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 210 @ 2mA, 10V
Nguvu - Max : 150mW
Mara kwa mara - Mpito : -
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SC-70, SOT-323
Kifurushi cha Kifaa cha Mtoaji : SC-70-3 (SOT323)

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