Nambari ya Sehemu :
SIHU6N62E-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 620V 6A TO-251
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
620V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
900 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
34nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
578pF @ 100V
Kuondoa Nguvu (Max) :
78W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
IPAK (TO-251)
Kifurushi / Kesi :
TO-251-3 Short Leads, IPak, TO-251AA