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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  5. NSVDTA123JM3T5G

ON Semiconductor - NSVDTA123JM3T5G

KEY Part #: K6527549

NSVDTA123JM3T5G Bei (USD) [1840247pcs Hisa]

  • 1 pcs$0.02010
Nambari ya Sehemu:
NSVDTA123JM3T5G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
TRANS SS SOT723 BR XSTR PNP.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Arrays, Viwango - Bridge Rectifiers, Viwango - Rectifiers - Moja, Moduli za Dereva za Nguvu, Transistors - JFETs and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
We specialize in ON Semiconductor NSVDTA123JM3T5G electronic components. NSVDTA123JM3T5G can be shipped within 24 hours after order. If you have any demands for NSVDTA123JM3T5G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSVDTA123JM3T5G Sifa za Bidhaa

Nambari ya Sehemu : NSVDTA123JM3T5G
Mzalishaji : ON Semiconductor
Maelezo : TRANS SS SOT723 BR XSTR PNP
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya Transistor : PNP - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 2.2 kOhms
Upinzani - Base ya Emitter (R2) : 47 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : -
Nguvu - Max : 260mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SOT-723
Kifurushi cha Kifaa cha Mtoaji : SOT-723

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