Infineon Technologies - IDC08D120T6MX1SA2

KEY Part #: K6439992

IDC08D120T6MX1SA2 Bei (USD) [62346pcs Hisa]

  • 1 pcs$0.62715

Nambari ya Sehemu:
IDC08D120T6MX1SA2
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
DIODE GEN PURP 1.2KV 10A WAFER.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - Arrays, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Moja, Viwango - Rectifiers - Arrays and Transistors - IGBTs - Moja ...
Faida ya Ushindani:
We specialize in Infineon Technologies IDC08D120T6MX1SA2 electronic components. IDC08D120T6MX1SA2 can be shipped within 24 hours after order. If you have any demands for IDC08D120T6MX1SA2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IDC08D120T6MX1SA2 Sifa za Bidhaa

Nambari ya Sehemu : IDC08D120T6MX1SA2
Mzalishaji : Infineon Technologies
Maelezo : DIODE GEN PURP 1.2KV 10A WAFER
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 1200V
Sasa - Wastani Aliyerekebishwa (Io) : 10A
Voltage - Mbele (Vf) (Max) @ Kama : 2.05V @ 10A
Kasi : Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : -
Sasa - Rejea kuvuja @ Vr : 2.7µA @ 1200V
Uwezo @ Vr, F : -
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : Die
Kifurushi cha Kifaa cha Mtoaji : Sawn on foil
Joto la Kufanya kazi - Junction : -40°C ~ 175°C

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