Vishay Semiconductor Diodes Division - RGL41JHE3/97

KEY Part #: K6439433

RGL41JHE3/97 Bei (USD) [765063pcs Hisa]

  • 1 pcs$0.05102
  • 10,000 pcs$0.05076

Nambari ya Sehemu:
RGL41JHE3/97
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 600V 1A DO213AB. Rectifiers 1 Amp 600 Volt 250ns
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - FET, MOSFETs - Moja ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division RGL41JHE3/97 electronic components. RGL41JHE3/97 can be shipped within 24 hours after order. If you have any demands for RGL41JHE3/97, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGL41JHE3/97 Sifa za Bidhaa

Nambari ya Sehemu : RGL41JHE3/97
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 600V 1A DO213AB
Mfululizo : SUPERECTIFIER®
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Sasa - Wastani Aliyerekebishwa (Io) : 1A
Voltage - Mbele (Vf) (Max) @ Kama : 1.3V @ 1A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 250ns
Sasa - Rejea kuvuja @ Vr : 5µA @ 600V
Uwezo @ Vr, F : 15pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-213AB, MELF (Glass)
Kifurushi cha Kifaa cha Mtoaji : DO-213AB
Joto la Kufanya kazi - Junction : -65°C ~ 175°C

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