IXTX6N200P3HV Bei (USD) [1824pcs Hisa]
- 1 pcs$27.05672
- 10 pcs$25.30359
- 100 pcs$21.93957
- Nambari ya Sehemu:
- IXTX6N200P3HV
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- 2000V TO 3000V POLAR3 POWER MOSF.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Moduli, Viwango - Bridge Rectifiers, Thyristors - SCR, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - Arrays and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in IXYS IXTX6N200P3HV electronic components. IXTX6N200P3HV can be shipped within 24 hours after order. If you have any demands for IXTX6N200P3HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTX6N200P3HV Sifa za Bidhaa
Nambari ya Sehemu :
IXTX6N200P3HV
Mzalishaji :
IXYS
Maelezo :
2000V TO 3000V POLAR3 POWER MOSF
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
2000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
4 Ohm @ 3A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
143nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3700pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
960W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-247PLUS-HV
Kifurushi / Kesi :
TO-247-3 Variant
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