IRFD123PBF Bei (USD) [151819pcs Hisa]
- 1 pcs$0.64387
- 10 pcs$0.57029
- 100 pcs$0.45071
- 500 pcs$0.33064
- 1,000 pcs$0.26103
- Nambari ya Sehemu:
- IRFD123PBF
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CH 100V 1.3A 4-DIP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCR, Moduli za Dereva za Nguvu and Transistors - FET, MOSFETs - RF ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix IRFD123PBF electronic components. IRFD123PBF can be shipped within 24 hours after order. If you have any demands for IRFD123PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD123PBF Sifa za Bidhaa
Nambari ya Sehemu :
IRFD123PBF
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 100V 1.3A 4-DIP
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.3A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
270 mOhm @ 780mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
360pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1.3W (Ta)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
4-DIP, Hexdip, HVMDIP
Kifurushi / Kesi :
4-DIP (0.300", 7.62mm)
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