Infineon Technologies - IPD60R360P7SAUMA1

KEY Part #: K6420379

IPD60R360P7SAUMA1 Bei (USD) [189744pcs Hisa]

  • 1 pcs$0.19493
  • 2,500 pcs$0.17913

Nambari ya Sehemu:
IPD60R360P7SAUMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 600V 9A TO252-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - IGBTs - Moduli, Transistors - IGBTs - Arrays, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Moja, Viwango - Zener - Moja, Viwango - Zener - Arrays and Viwango - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD60R360P7SAUMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPD60R360P7SAUMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 600V 9A TO252-3
Mfululizo : CoolMOS™ P7
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 360 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id : 4V @ 140µA
Malango ya Lango (Qg) (Max) @ Vgs : 13nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 555pF @ 400V
Makala ya FET : -
Kuondoa Nguvu (Max) : 41W (Tc)
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TO252-3
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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