NSB8JTHE3_A/P Bei (USD) [128710pcs Hisa]
- 1 pcs$0.28737
- 1,000 pcs$0.26162
- Nambari ya Sehemu:
- NSB8JTHE3_A/P
- Mzalishaji:
- Vishay Semiconductor Diodes Division
- Maelezo ya kina:
- DIODE GEN PURP 600V 8A TO263AB. Rectifiers 8A 600V Glass Psvtd AEC-Q101 Qualified
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Moduli za Dereva za Nguvu, Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Kusudi Maalum, Viwango - Rectifiers - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Viwango - RF ...
- Faida ya Ushindani:
- We specialize in Vishay Semiconductor Diodes Division NSB8JTHE3_A/P electronic components. NSB8JTHE3_A/P can be shipped within 24 hours after order. If you have any demands for NSB8JTHE3_A/P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSB8JTHE3_A/P Sifa za Bidhaa
Nambari ya Sehemu :
NSB8JTHE3_A/P
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
DIODE GEN PURP 600V 8A TO263AB
Mfululizo :
Automotive, AEC-Q101
Hali ya Sehemu :
Active
Aina ya Diode :
Standard
Voltage - DC Reverse (Vr) (Max) :
600V
Sasa - Wastani Aliyerekebishwa (Io) :
8A
Voltage - Mbele (Vf) (Max) @ Kama :
1.1V @ 8A
Kasi :
Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
-
Sasa - Rejea kuvuja @ Vr :
10µA @ 600V
Uwezo @ Vr, F :
55pF @ 4V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji :
TO-263AB
Joto la Kufanya kazi - Junction :
-55°C ~ 150°C
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