Microsemi Corporation - APT9F100B

KEY Part #: K6394503

APT9F100B Bei (USD) [16750pcs Hisa]

  • 1 pcs$2.71999
  • 94 pcs$2.70646

Nambari ya Sehemu:
APT9F100B
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
MOSFET N-CH 1000V 9A TO-247.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Kufika, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - RF and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT9F100B Sifa za Bidhaa

Nambari ya Sehemu : APT9F100B
Mzalishaji : Microsemi Corporation
Maelezo : MOSFET N-CH 1000V 9A TO-247
Mfululizo : POWER MOS 8™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.6 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2606pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 337W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-247 [B]
Kifurushi / Kesi : TO-247-3