Diodes Incorporated - DMJ70H600SH3

KEY Part #: K6393058

DMJ70H600SH3 Bei (USD) [54655pcs Hisa]

  • 1 pcs$0.71540
  • 75 pcs$0.66690

Nambari ya Sehemu:
DMJ70H600SH3
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET BVDSS 651V 800V TO251.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Moduli, Viwango - RF and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMJ70H600SH3 electronic components. DMJ70H600SH3 can be shipped within 24 hours after order. If you have any demands for DMJ70H600SH3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMJ70H600SH3 Sifa za Bidhaa

Nambari ya Sehemu : DMJ70H600SH3
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET BVDSS 651V 800V TO251
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 700V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 11A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 600 mOhm @ 2.4A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 18.2nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 643pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 113W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-251
Kifurushi / Kesi : TO-251-3, IPak, Short Leads