[3642pcs Hisa]
- Nambari ya Sehemu:
- IDC08S120EX1SA3
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- DIODE SCHOTTKY 1.2KV 7.5A WAFER.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moduli, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Arrays, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Kufika and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IDC08S120EX1SA3 electronic components. IDC08S120EX1SA3 can be shipped within 24 hours after order. If you have any demands for IDC08S120EX1SA3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDC08S120EX1SA3 Sifa za Bidhaa
Nambari ya Sehemu :
IDC08S120EX1SA3
Mzalishaji :
Infineon Technologies
Maelezo :
DIODE SCHOTTKY 1.2KV 7.5A WAFER
Mfululizo :
CoolSiC™
Hali ya Sehemu :
Obsolete
Aina ya Diode :
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) :
1200V
Sasa - Wastani Aliyerekebishwa (Io) :
7.5A (DC)
Voltage - Mbele (Vf) (Max) @ Kama :
1.8V @ 7.5A
Kasi :
No Recovery Time > 500mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
0ns
Sasa - Rejea kuvuja @ Vr :
180µA @ 1200V
Uwezo @ Vr, F :
380pF @ 1V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
Die
Kifurushi cha Kifaa cha Mtoaji :
Sawn on foil
Joto la Kufanya kazi - Junction :
-55°C ~ 175°C
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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VS-E4PU3006L-N3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 30A TO247AD. Rectifiers 600V 30A FRED Pt TO-247 LL 2L
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