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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  1. Nyumbani
  2. Bidhaa
  3. Duru Jumuishi (ICs)
  4. Kumbukumbu
  5. IS43R86400E-6BL

ISSI, Integrated Silicon Solution Inc - IS43R86400E-6BL

KEY Part #: K936976

IS43R86400E-6BL Bei (USD) [15541pcs Hisa]

  • 1 pcs$2.94826
Nambari ya Sehemu:
IS43R86400E-6BL
Mzalishaji:
ISSI, Integrated Silicon Solution Inc
Maelezo ya kina:
IC DRAM 512M PARALLEL 166MHZ. DRAM DDR,512M,2.5V,RoHs 166MHz,64Mx8
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Maingiliano - Maalum, Saa / Saa - Maombi Maalum, Maingiliano - UARTs (Transformer ya Universal Asyn, Linear - Amplifiers - Sauti, Linear - Amplifiers - Amps za Video na Moduli, Upataji wa Takwimu - Mwisho wa Analog Mbele (AFE), PMIC - RMS kwa vibadilishaji vya DC and Kumbukumbu - Proms za Usanidi kwa FPGAs ...
Faida ya Ushindani:
We specialize in ISSI, Integrated Silicon Solution Inc IS43R86400E-6BL electronic components. IS43R86400E-6BL can be shipped within 24 hours after order. If you have any demands for IS43R86400E-6BL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS43R86400E-6BL Sifa za Bidhaa

Nambari ya Sehemu : IS43R86400E-6BL
Mzalishaji : ISSI, Integrated Silicon Solution Inc
Maelezo : IC DRAM 512M PARALLEL 166MHZ
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR
Saizi ya kumbukumbu : 512Mb (64M x 8)
Usafirishaji wa Saa : 166MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 700ps
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 2.3V ~ 2.7V
Joto la Kufanya kazi : 0°C ~ 70°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 60-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 60-TFBGA (13x8)

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