Vishay Siliconix - IRFBC20STRR

KEY Part #: K6414389

[12771pcs Hisa]


    Nambari ya Sehemu:
    IRFBC20STRR
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET N-CH 600V 2.2A D2PAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Moja, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Zener - Arrays, Transistors - IGBTs - Moduli and Thyristors - SCR ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix IRFBC20STRR electronic components. IRFBC20STRR can be shipped within 24 hours after order. If you have any demands for IRFBC20STRR, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFBC20STRR Sifa za Bidhaa

    Nambari ya Sehemu : IRFBC20STRR
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET N-CH 600V 2.2A D2PAK
    Mfululizo : -
    Hali ya Sehemu : Active
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 600V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2.2A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 4.4 Ohm @ 1.3A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 18nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 350pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 3.1W (Ta), 50W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : D2PAK
    Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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