Taiwan Semiconductor Corporation - TSP10H200S S1G

KEY Part #: K6453340

TSP10H200S S1G Bei (USD) [351478pcs Hisa]

  • 1 pcs$0.10523

Nambari ya Sehemu:
TSP10H200S S1G
Mzalishaji:
Taiwan Semiconductor Corporation
Maelezo ya kina:
DIODE SCHOTTKY 200V 10A TO277A.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Moduli, Viwango - Zener - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
We specialize in Taiwan Semiconductor Corporation TSP10H200S S1G electronic components. TSP10H200S S1G can be shipped within 24 hours after order. If you have any demands for TSP10H200S S1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSP10H200S S1G Sifa za Bidhaa

Nambari ya Sehemu : TSP10H200S S1G
Mzalishaji : Taiwan Semiconductor Corporation
Maelezo : DIODE SCHOTTKY 200V 10A TO277A
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Schottky
Voltage - DC Reverse (Vr) (Max) : 200V
Sasa - Wastani Aliyerekebishwa (Io) : 10A
Voltage - Mbele (Vf) (Max) @ Kama : 910mV @ 10A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : -
Sasa - Rejea kuvuja @ Vr : 100µA @ 200V
Uwezo @ Vr, F : -
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-277, 3-PowerDFN
Kifurushi cha Kifaa cha Mtoaji : TO-277A (SMPC)
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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