Vishay Semiconductor Diodes Division - UG12JT-E3/45

KEY Part #: K6441280

UG12JT-E3/45 Bei (USD) [51954pcs Hisa]

  • 1 pcs$0.73167
  • 10 pcs$0.65684
  • 25 pcs$0.61979
  • 100 pcs$0.52806
  • 250 pcs$0.49582
  • 500 pcs$0.43384
  • 1,000 pcs$0.34004
  • 2,500 pcs$0.31658
  • 5,000 pcs$0.31267

Nambari ya Sehemu:
UG12JT-E3/45
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 600V 12A TO220AC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Viwango - Rectifiers - Moja, Transistors - Kusudi Maalum, Viwango - RF, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Moja, Viwango - Bridge Rectifiers and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division UG12JT-E3/45 electronic components. UG12JT-E3/45 can be shipped within 24 hours after order. If you have any demands for UG12JT-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UG12JT-E3/45 Sifa za Bidhaa

Nambari ya Sehemu : UG12JT-E3/45
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 600V 12A TO220AC
Mfululizo : -
Hali ya Sehemu : Obsolete
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Sasa - Wastani Aliyerekebishwa (Io) : 12A
Voltage - Mbele (Vf) (Max) @ Kama : 1.75V @ 12A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 50ns
Sasa - Rejea kuvuja @ Vr : 30µA @ 600V
Uwezo @ Vr, F : -
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-220-2
Kifurushi cha Kifaa cha Mtoaji : TO-220AC
Joto la Kufanya kazi - Junction : 150°C (Max)

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