Vishay Semiconductor Diodes Division - BAS19-HE3-18

KEY Part #: K6458600

BAS19-HE3-18 Bei (USD) [2884683pcs Hisa]

  • 1 pcs$0.01282
  • 10,000 pcs$0.01186

Nambari ya Sehemu:
BAS19-HE3-18
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching 120 Volt 625mA 50ns
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moja, Transistors - IGBTs - Moduli, Thyristors - DIAC, SIDAC and Transistors - FET, MOSFETs - RF ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division BAS19-HE3-18 electronic components. BAS19-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAS19-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS19-HE3-18 Sifa za Bidhaa

Nambari ya Sehemu : BAS19-HE3-18
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 100V 200MA SOT23
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Sasa - Wastani Aliyerekebishwa (Io) : 200mA
Voltage - Mbele (Vf) (Max) @ Kama : 1.25V @ 200mA
Kasi : Small Signal =< 200mA (Io), Any Speed
Rudisha Wakati wa Kuokoa (trr) : 50ns
Sasa - Rejea kuvuja @ Vr : 100nA @ 100V
Uwezo @ Vr, F : 5pF @ 0V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji : SOT-23
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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