Samsung Semiconductor - KLUFG8R1EM-B0C1

KEY Part #: K7360022

[22600pcs Hisa]


    Nambari ya Sehemu:
    KLUFG8R1EM-B0C1
    Mzalishaji:
    Samsung Semiconductor
    Maelezo ya kina:
    UFS 2.1 512 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: SLC Nand, LPDDR4X, HBM Flarebolt, GDDR6, LPDDR4, LPDDR3, MODULE and DDR3 ...
    Faida ya Ushindani:
    We specialize in Samsung Semiconductor KLUFG8R1EM-B0C1 electronic components. KLUFG8R1EM-B0C1 can be shipped within 24 hours after order. If you have any demands for KLUFG8R1EM-B0C1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    KLUFG8R1EM-B0C1 Sifa za Bidhaa

    Nambari ya Sehemu : KLUFG8R1EM-B0C1
    Mzalishaji : Samsung Semiconductor
    Maelezo : UFS 2.1 512 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production
    Mfululizo : DDR3
    version : UFS 2.1
    Density : 512 GB
    voltage : 1.8 / 3.3 V
    interface : G3 2Lane
    mfuko Size : 11.5 x 13 x 1.0 mm
    Temp. : -25 ~ 85 °C
    Bidhaa Hali : Mass Production

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