[22600pcs Hisa]
- Nambari ya Sehemu:
- KLUFG8R1EM-B0C1
- Mzalishaji:
- Samsung Semiconductor
- Maelezo ya kina:
- UFS 2.1 512 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: GDDR5, GDDR6, LPDDR3, LPDDR5, DDR4, DDR3, SLC Nand and LPDDR4X ...
- Faida ya Ushindani:
- We specialize in Samsung Semiconductor KLUFG8R1EM-B0C1 electronic components. KLUFG8R1EM-B0C1 can be shipped within 24 hours after order. If you have any demands for KLUFG8R1EM-B0C1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
KLUFG8R1EM-B0C1 Sifa za Bidhaa
Nambari ya Sehemu :
KLUFG8R1EM-B0C1
Mzalishaji :
Samsung Semiconductor
Maelezo :
UFS 2.1 512 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production
Mfululizo :
DDR3
version :
UFS 2.1
Density :
512 GB
voltage :
1.8 / 3.3 V
interface :
G3 2Lane
mfuko Size :
11.5 x 13 x 1.0 mm
Temp. :
-25 ~ 85 °C
Bidhaa Hali :
Mass Production
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