Vishay Semiconductor Diodes Division - UH10JT-E3/4W

KEY Part #: K6445574

UH10JT-E3/4W Bei (USD) [2061pcs Hisa]

  • 1,000 pcs$0.27408

Nambari ya Sehemu:
UH10JT-E3/4W
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 600V 10A TO220AC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Transistors - JFETs, Viwango - Rectifiers - Moja, Thyristors - SCR, Transistors - IGBTs - Moja, Transistors - IGBTs - Moduli, Viwango - RF and Transistors - FET, MOSFETs - Moja ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division UH10JT-E3/4W electronic components. UH10JT-E3/4W can be shipped within 24 hours after order. If you have any demands for UH10JT-E3/4W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UH10JT-E3/4W Sifa za Bidhaa

Nambari ya Sehemu : UH10JT-E3/4W
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 600V 10A TO220AC
Mfululizo : -
Hali ya Sehemu : Obsolete
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Sasa - Wastani Aliyerekebishwa (Io) : 10A
Voltage - Mbele (Vf) (Max) @ Kama : -
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 25ns
Sasa - Rejea kuvuja @ Vr : -
Uwezo @ Vr, F : -
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-220-2
Kifurushi cha Kifaa cha Mtoaji : TO-220AC
Joto la Kufanya kazi - Junction : -55°C ~ 175°C

Unaweza pia Kuvutiwa Na
  • C2D05120E

    Cree/Wolfspeed

    DIODE SCHOTTKY 1.2KV 17.5A TO252.

  • BAT54WH6327XTSA1

    Infineon Technologies

    DIODE SCHOTTKY 30V 200MA SOT323.

  • IDB23E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 41A TO263-3.

  • IDB12E120ATMA1

    Infineon Technologies

    DIODE GEN PURP 1.2KV 28A TO263-3.

  • IDB45E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 71A TO263-3.

  • IDB15E60

    Infineon Technologies

    DIODE GEN PURP 600V 29.2A TO263. Diodes - General Purpose, Power, Switching Fast Switching 600V EmCon Diode