DRDNB16W-7 Bei (USD) [773543pcs Hisa]
- 1 pcs$0.04782
- 3,000 pcs$0.04307
- 6,000 pcs$0.04046
- 15,000 pcs$0.03785
- 30,000 pcs$0.03472
- Nambari ya Sehemu:
- DRDNB16W-7
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- TRANS PREBIAS NPN/DIODE SOT363.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Arrays and Moduli za Dereva za Nguvu ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DRDNB16W-7 electronic components. DRDNB16W-7 can be shipped within 24 hours after order. If you have any demands for DRDNB16W-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DRDNB16W-7 Sifa za Bidhaa
Nambari ya Sehemu :
DRDNB16W-7
Mzalishaji :
Diodes Incorporated
Maelezo :
TRANS PREBIAS NPN/DIODE SOT363
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
NPN - Pre-Biased + Diode
Sasa - Mtoza (Ic) (Max) :
600mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
1 kOhms
Upinzani - Base ya Emitter (R2) :
10 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
56 @ 50mA, 5V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 2.5mA, 50mA
Sasa - Ushuru Mtoaji :
500nA
Mara kwa mara - Mpito :
200MHz
Nguvu - Max :
200mW
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji :
SOT-363
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