Diodes Incorporated - DRDNB16W-7

KEY Part #: K6527451

DRDNB16W-7 Bei (USD) [773543pcs Hisa]

  • 1 pcs$0.04782
  • 3,000 pcs$0.04307
  • 6,000 pcs$0.04046
  • 15,000 pcs$0.03785
  • 30,000 pcs$0.03472

Nambari ya Sehemu:
DRDNB16W-7
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
TRANS PREBIAS NPN/DIODE SOT363.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - RF and Viwango - Rectifiers - Arrays ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DRDNB16W-7 electronic components. DRDNB16W-7 can be shipped within 24 hours after order. If you have any demands for DRDNB16W-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DRDNB16W-7 Sifa za Bidhaa

Nambari ya Sehemu : DRDNB16W-7
Mzalishaji : Diodes Incorporated
Maelezo : TRANS PREBIAS NPN/DIODE SOT363
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : NPN - Pre-Biased + Diode
Sasa - Mtoza (Ic) (Max) : 600mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 1 kOhms
Upinzani - Base ya Emitter (R2) : 10 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 56 @ 50mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : 200MHz
Nguvu - Max : 200mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji : SOT-363

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