Nexperia USA Inc. - PDTB123ET,215

KEY Part #: K6528502

PDTB123ET,215 Bei (USD) [1173564pcs Hisa]

  • 1 pcs$0.03152
  • 3,000 pcs$0.02244
  • 6,000 pcs$0.01952
  • 15,000 pcs$0.01659
  • 30,000 pcs$0.01561
  • 75,000 pcs$0.01464
  • 150,000 pcs$0.01301

Nambari ya Sehemu:
PDTB123ET,215
Mzalishaji:
Nexperia USA Inc.
Maelezo ya kina:
TRANS PREBIAS PNP 250MW TO236AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Moduli, Thyristors - TRIAC, Transistors - IGBTs - Arrays, Transistors - Kusudi Maalum and Viwango - Zener - Arrays ...
Faida ya Ushindani:
We specialize in Nexperia USA Inc. PDTB123ET,215 electronic components. PDTB123ET,215 can be shipped within 24 hours after order. If you have any demands for PDTB123ET,215, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PDTB123ET,215 Sifa za Bidhaa

Nambari ya Sehemu : PDTB123ET,215
Mzalishaji : Nexperia USA Inc.
Maelezo : TRANS PREBIAS PNP 250MW TO236AB
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : PNP - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 500mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 2.2 kOhms
Upinzani - Base ya Emitter (R2) : 2.2 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Sasa - Ushuru Mtoaji : 100nA (ICBO)
Mara kwa mara - Mpito : -
Nguvu - Max : 250mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji : TO-236AB

Unaweza pia Kuvutiwa Na