Infineon Technologies - BUZ30AHXKSA1

KEY Part #: K6399053

BUZ30AHXKSA1 Bei (USD) [38804pcs Hisa]

  • 1 pcs$1.00762

Nambari ya Sehemu:
BUZ30AHXKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 200V 21A TO220-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Zener - Moja, Transistors - IGBTs - Moduli, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
We specialize in Infineon Technologies BUZ30AHXKSA1 electronic components. BUZ30AHXKSA1 can be shipped within 24 hours after order. If you have any demands for BUZ30AHXKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BUZ30AHXKSA1 Sifa za Bidhaa

Nambari ya Sehemu : BUZ30AHXKSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 200V 21A TO220-3
Mfululizo : SIPMOS®
Hali ya Sehemu : Not For New Designs
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 21A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 130 mOhm @ 13.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1900pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 125W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PG-TO220-3
Kifurushi / Kesi : TO-220-3