Vishay Semiconductor Diodes Division - FEPB6DT-E3/81

KEY Part #: K6477233

FEPB6DT-E3/81 Bei (USD) [5493pcs Hisa]

  • 800 pcs$0.27064

Nambari ya Sehemu:
FEPB6DT-E3/81
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE ARRAY GP 200V 6A TO263AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Transistors - FET, MOSFETs - RF, Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - Arrays, Moduli za Dereva za Nguvu, Viwango - Zener - Arrays, Thyristors - SCR and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division FEPB6DT-E3/81 electronic components. FEPB6DT-E3/81 can be shipped within 24 hours after order. If you have any demands for FEPB6DT-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FEPB6DT-E3/81 Sifa za Bidhaa

Nambari ya Sehemu : FEPB6DT-E3/81
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE ARRAY GP 200V 6A TO263AB
Mfululizo : -
Hali ya Sehemu : Obsolete
Usanidi wa Diode : 1 Pair Common Cathode
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Sasa - Wastani Aliyesafishwa (Io) (kwa Diode) : 6A
Voltage - Mbele (Vf) (Max) @ Kama : 975mV @ 3A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 35ns
Sasa - Rejea kuvuja @ Vr : 5µA @ 200V
Joto la Kufanya kazi - Junction : -55°C ~ 150°C
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji : TO-263AB

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