Vishay Semiconductor Diodes Division - FESB8BTHE3/81

KEY Part #: K6456408

FESB8BTHE3/81 Bei (USD) [112580pcs Hisa]

  • 1 pcs$0.32854
  • 800 pcs$0.30772

Nambari ya Sehemu:
FESB8BTHE3/81
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 100V 8A TO263AB. Rectifiers 8.0A 100 Volt 35ns 125 Amp IFSM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - RF, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - RF, Thyristors - DIAC, SIDAC, Thyristors - TRIAC and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division FESB8BTHE3/81 electronic components. FESB8BTHE3/81 can be shipped within 24 hours after order. If you have any demands for FESB8BTHE3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FESB8BTHE3/81 Sifa za Bidhaa

Nambari ya Sehemu : FESB8BTHE3/81
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 100V 8A TO263AB
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Sasa - Wastani Aliyerekebishwa (Io) : 8A
Voltage - Mbele (Vf) (Max) @ Kama : 950mV @ 8A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 35ns
Sasa - Rejea kuvuja @ Vr : 10µA @ 100V
Uwezo @ Vr, F : -
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji : TO-263AB
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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