Infineon Technologies - F1235R12KT4GBOSA1

KEY Part #: K6534747

[399pcs Hisa]


    Nambari ya Sehemu:
    F1235R12KT4GBOSA1
    Mzalishaji:
    Infineon Technologies
    Maelezo ya kina:
    IGBT F1235R12KT4GBOSA1.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - RF, Viwango - Zener - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCRs - Moduli, Transistors - IGBTs - Moduli, Moduli za Dereva za Nguvu and Transistors - Bipolar (BJT) - Kufika ...
    Faida ya Ushindani:
    We specialize in Infineon Technologies F1235R12KT4GBOSA1 electronic components. F1235R12KT4GBOSA1 can be shipped within 24 hours after order. If you have any demands for F1235R12KT4GBOSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    F1235R12KT4GBOSA1 Sifa za Bidhaa

    Nambari ya Sehemu : F1235R12KT4GBOSA1
    Mzalishaji : Infineon Technologies
    Maelezo : IGBT F1235R12KT4GBOSA1
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya IGBT : Trench Field Stop
    Usanidi : Single
    Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
    Sasa - Mtoza (Ic) (Max) : 35A
    Nguvu - Max : 210W
    Vce (on) (Max) @ Vge, Ic : 2.15V @ 15V, 35A
    Sasa - Ushuru Mtoaji : 1mA
    Uingilivu Ufungaji (Wakuu) @ Vce : 2nF @ 25V
    Uingizaji : Standard
    Mtaalam wa NTC : No
    Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
    Aina ya Kuinua : Chassis Mount
    Kifurushi / Kesi : Module
    Kifurushi cha Kifaa cha Mtoaji : Module

    Unaweza pia Kuvutiwa Na
    • VS-VSKH91/12

      Vishay Semiconductor Diodes Division

      MODULE THYRISTOR 95A ADD-A-PAK.

    • VS-CPV364M4UPBF

      Vishay Semiconductor Diodes Division

      MOD IGBT 3PHASE INV 600V SIP.

    • VS-CPV363M4UPBF

      Vishay Semiconductor Diodes Division

      MOD IGBT 3PHASE INV 600V SIP.

    • VS-CPV362M4KPBF

      Vishay Semiconductor Diodes Division

      MOD IGBT 3PHASE INV 600V SIP.

    • VS-CPV362M4UPBF

      Vishay Semiconductor Diodes Division

      MOD IGBT 3PHASE INV 600V SIP.

    • VS-CPV363M4FPBF

      Vishay Semiconductor Diodes Division

      MOD IGBT 3PHASE INV 600V SIP.