Nambari ya Sehemu :
GI826-E3/54
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
DIODE GEN PURP 600V 5A P600
Hali ya Sehemu :
Obsolete
Voltage - DC Reverse (Vr) (Max) :
600V
Sasa - Wastani Aliyerekebishwa (Io) :
5A
Voltage - Mbele (Vf) (Max) @ Kama :
1.1V @ 5A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
200ns
Sasa - Rejea kuvuja @ Vr :
10µA @ 600V
Uwezo @ Vr, F :
300pF @ 4V, 1MHz
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
P600, Axial
Kifurushi cha Kifaa cha Mtoaji :
P600
Joto la Kufanya kazi - Junction :
-50°C ~ 150°C