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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
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  5. AS4C8M16D1-5BCN

Alliance Memory, Inc. - AS4C8M16D1-5BCN

KEY Part #: K942048

AS4C8M16D1-5BCN Bei (USD) [42560pcs Hisa]

  • 1 pcs$1.02658
  • 240 pcs$1.02147
Nambari ya Sehemu:
AS4C8M16D1-5BCN
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC DRAM 128M PARALLEL 60TFBGA. DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Kumbukumbu - Watawala, PMIC - AU Kidhibiti, Viwango Bora, Upataji wa data - Potentiometers za dijiti, Saa / Saa - Mistari ya Kuchelewesha, Linear - Watengenezaji, Upataji wa Takwimu - Mwisho wa Analog Mbele (AFE), Maingiliano - Serializer, Deseriizer and Iliyoingizwa - Microcontroller - Maombi Maalum ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS4C8M16D1-5BCN electronic components. AS4C8M16D1-5BCN can be shipped within 24 hours after order. If you have any demands for AS4C8M16D1-5BCN, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C8M16D1-5BCN Sifa za Bidhaa

Nambari ya Sehemu : AS4C8M16D1-5BCN
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC DRAM 128M PARALLEL 60TFBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR
Saizi ya kumbukumbu : 128Mb (8M x 16)
Usafirishaji wa Saa : 200MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 700ps
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 2.3V ~ 2.7V
Joto la Kufanya kazi : 0°C ~ 70°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 60-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 60-TFBGA (8x13)

Habari mpya kabisa

Alliance Memory Low-Power DDR2 SDRAM
Alliance Memory Low Power CMOS SRAM
Alliance Memory MT41x DDR3 SDRAMs
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