Nambari ya Sehemu :
VSIB660-E3/45
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
BRIDGE RECT 1P 600V 2.8A GSIB-5S
Hali ya Sehemu :
Obsolete
Aina ya Diode :
Single Phase
Voltage - Rejea ya kilele (Max) :
600V
Sasa - Wastani Aliyerekebishwa (Io) :
2.8A
Voltage - Mbele (Vf) (Max) @ Kama :
950mV @ 3A
Sasa - Rejea kuvuja @ Vr :
10µA @ 600V
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
4-SIP, GSIB-5S
Kifurushi cha Kifaa cha Mtoaji :
GSIB-5S