Nexperia USA Inc. - PDTC123YU,115

KEY Part #: K6528698

PDTC123YU,115 Bei (USD) [2960475pcs Hisa]

  • 1 pcs$0.01256
  • 3,000 pcs$0.01249
  • 6,000 pcs$0.01127
  • 15,000 pcs$0.00980
  • 30,000 pcs$0.00882
  • 75,000 pcs$0.00784
  • 150,000 pcs$0.00653

Nambari ya Sehemu:
PDTC123YU,115
Mzalishaji:
Nexperia USA Inc.
Maelezo ya kina:
TRANS PREBIAS NPN 200MW SOT323.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - Ushirikiano uliopangwa, Transistors - JFETs, Thyristors - SCRs - Moduli, Thyristors - SCR, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - RF and Moduli za Dereva za Nguvu ...
Faida ya Ushindani:
We specialize in Nexperia USA Inc. PDTC123YU,115 electronic components. PDTC123YU,115 can be shipped within 24 hours after order. If you have any demands for PDTC123YU,115, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PDTC123YU,115 Sifa za Bidhaa

Nambari ya Sehemu : PDTC123YU,115
Mzalishaji : Nexperia USA Inc.
Maelezo : TRANS PREBIAS NPN 200MW SOT323
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 2.2 kOhms
Upinzani - Base ya Emitter (R2) : 10 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Sasa - Ushuru Mtoaji : 1µA
Mara kwa mara - Mpito : -
Nguvu - Max : 200mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SC-70, SOT-323
Kifurushi cha Kifaa cha Mtoaji : SC-70

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