BSM50GB120DN2HOSA1 Bei (USD) [1241pcs Hisa]
- 1 pcs$34.90688
- Nambari ya Sehemu:
- BSM50GB120DN2HOSA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- IGBT 2 MED POWER 34MM-1.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - RF, Thyristors - DIAC, SIDAC, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Viwango - Rectifiers - Moja ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BSM50GB120DN2HOSA1 electronic components. BSM50GB120DN2HOSA1 can be shipped within 24 hours after order. If you have any demands for BSM50GB120DN2HOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM50GB120DN2HOSA1 Sifa za Bidhaa
Nambari ya Sehemu :
BSM50GB120DN2HOSA1
Mzalishaji :
Infineon Technologies
Maelezo :
IGBT 2 MED POWER 34MM-1
Mfululizo :
-
Hali ya Sehemu :
Not For New Designs
Aina ya IGBT :
-
Usanidi :
Half Bridge
Voltage - Kukusanya Emitter Kuvunja (Max) :
1200V
Sasa - Mtoza (Ic) (Max) :
78A
Nguvu - Max :
400W
Vce (on) (Max) @ Vge, Ic :
3V @ 15V, 50A
Sasa - Ushuru Mtoaji :
1mA
Uingilivu Ufungaji (Wakuu) @ Vce :
3.3nF @ 25V
Uingizaji :
Standard
Mtaalam wa NTC :
No
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi / Kesi :
Module
Kifurushi cha Kifaa cha Mtoaji :
Module
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