Nambari ya Sehemu :
HS1J R3G
Mzalishaji :
Taiwan Semiconductor Corporation
Maelezo :
DIODE GEN PURP 600V 1A DO214AC
Voltage - DC Reverse (Vr) (Max) :
600V
Sasa - Wastani Aliyerekebishwa (Io) :
1A
Voltage - Mbele (Vf) (Max) @ Kama :
1.7V @ 1A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
75ns
Sasa - Rejea kuvuja @ Vr :
5µA @ 600V
Uwezo @ Vr, F :
20pF @ 4V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
DO-214AC, SMA
Kifurushi cha Kifaa cha Mtoaji :
DO-214AC (SMA)
Joto la Kufanya kazi - Junction :
-55°C ~ 150°C