Diodes Incorporated - DMN63D1L-13

KEY Part #: K6416422

DMN63D1L-13 Bei (USD) [2377865pcs Hisa]

  • 1 pcs$0.01556
  • 10,000 pcs$0.01405

Nambari ya Sehemu:
DMN63D1L-13
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET N-CH 60V 0.38A SOT23.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Arrays, Transistors - Ushirikiano uliopangwa and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMN63D1L-13 electronic components. DMN63D1L-13 can be shipped within 24 hours after order. If you have any demands for DMN63D1L-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN63D1L-13 Sifa za Bidhaa

Nambari ya Sehemu : DMN63D1L-13
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET N-CH 60V 0.38A SOT23
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 380mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 2 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 0.3nC @ 4.5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 30pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 370mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-23
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3