Nambari ya Sehemu :
1N5811US
Mzalishaji :
Microsemi Corporation
Maelezo :
DIODE GEN PURP 150V 3A B-MELF
Voltage - DC Reverse (Vr) (Max) :
150V
Sasa - Wastani Aliyerekebishwa (Io) :
3A
Voltage - Mbele (Vf) (Max) @ Kama :
875mV @ 4A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
30ns
Sasa - Rejea kuvuja @ Vr :
5µA @ 50V
Uwezo @ Vr, F :
60pF @ 10V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SQ-MELF, B
Kifurushi cha Kifaa cha Mtoaji :
B, SQ-MELF
Joto la Kufanya kazi - Junction :
-65°C ~ 175°C