Infineon Technologies - DF200R12KE3HOSA1

KEY Part #: K6534514

DF200R12KE3HOSA1 Bei (USD) [992pcs Hisa]

  • 1 pcs$46.80541

Nambari ya Sehemu:
DF200R12KE3HOSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
IGBT MODULE VCES 1200V 200A.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Viwango - Rectifiers - Moja, Transistors - Ushirikiano uliopangwa, Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moja and Thyristors - TRIAC ...
Faida ya Ushindani:
We specialize in Infineon Technologies DF200R12KE3HOSA1 electronic components. DF200R12KE3HOSA1 can be shipped within 24 hours after order. If you have any demands for DF200R12KE3HOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DF200R12KE3HOSA1 Sifa za Bidhaa

Nambari ya Sehemu : DF200R12KE3HOSA1
Mzalishaji : Infineon Technologies
Maelezo : IGBT MODULE VCES 1200V 200A
Mfululizo : -
Hali ya Sehemu : Active
Aina ya IGBT : -
Usanidi : Single
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : -
Nguvu - Max : 1040W
Vce (on) (Max) @ Vge, Ic : 2.15V @ 15V, 200A
Sasa - Ushuru Mtoaji : 5mA
Uingilivu Ufungaji (Wakuu) @ Vce : 14nF @ 25V
Uingizaji : Standard
Mtaalam wa NTC : No
Joto la Kufanya kazi : -40°C ~ 125°C
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : Module
Kifurushi cha Kifaa cha Mtoaji : Module