RN1910FE,LF(CT Bei (USD) [1936260pcs Hisa]
- 1 pcs$0.01920
- 4,000 pcs$0.01910
- 8,000 pcs$0.01661
- 12,000 pcs$0.01412
- 28,000 pcs$0.01329
- 100,000 pcs$0.01107
- Nambari ya Sehemu:
- RN1910FE,LF(CT
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- TRANS 2NPN PREBIAS 0.1W ES6.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Viwango - RF, Transistors - IGBTs - Moduli, Thyristors - TRIAC, Viwango - Bridge Rectifiers, Viwango - Rectifiers - Moja, Transistors - IGBTs - Moja and Transistors - JFETs ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage RN1910FE,LF(CT electronic components. RN1910FE,LF(CT can be shipped within 24 hours after order. If you have any demands for RN1910FE,LF(CT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1910FE,LF(CT Sifa za Bidhaa
Nambari ya Sehemu :
RN1910FE,LF(CT
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
TRANS 2NPN PREBIAS 0.1W ES6
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
2 NPN - Pre-Biased (Dual)
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
4.7 kOhms
Upinzani - Base ya Emitter (R2) :
-
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Sasa - Ushuru Mtoaji :
100nA (ICBO)
Mara kwa mara - Mpito :
250MHz
Nguvu - Max :
100mW
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-563, SOT-666
Kifurushi cha Kifaa cha Mtoaji :
ES6
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