MT3S111P(TE12L,F) Bei (USD) [244499pcs Hisa]
- 1 pcs$0.15128
- Nambari ya Sehemu:
- MT3S111P(TE12L,F)
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- RF TRANS NPN 6V 8GHZ PW-MINI.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Moja, Viwango - Zener - Moja, Transistors - IGBTs - Arrays, Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Arrays and Transistors - IGBTs - Moduli ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage MT3S111P(TE12L,F) electronic components. MT3S111P(TE12L,F) can be shipped within 24 hours after order. If you have any demands for MT3S111P(TE12L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MT3S111P(TE12L,F) Sifa za Bidhaa
Nambari ya Sehemu :
MT3S111P(TE12L,F)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
RF TRANS NPN 6V 8GHZ PW-MINI
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
NPN
Voltage - Kukusanya Emitter Kuvunja (Max) :
6V
Mara kwa mara - Mpito :
8GHz
Kielelezo cha Kelele (dB Type @ f) :
1.25dB @ 1GHz
Pata :
10.5dB
Nguvu - Max :
1W
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
200 @ 30mA, 5V
Sasa - Mtoza (Ic) (Max) :
100mA
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-243AA
Kifurushi cha Kifaa cha Mtoaji :
PW-MINI
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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