SISB46DN-T1-GE3 Bei (USD) [244678pcs Hisa]
- 1 pcs$0.15117
- 3,000 pcs$0.14225
- Nambari ya Sehemu:
- SISB46DN-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2N-CH 40V POWERPAK 1212-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Moja, Transistors - IGBTs - Arrays, Viwango - Rectifiers - Arrays, Transistors - Ushirikiano uliopangwa and Transistors - FET, MOSFETs - Moja ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SISB46DN-T1-GE3 electronic components. SISB46DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISB46DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISB46DN-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SISB46DN-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2N-CH 40V POWERPAK 1212-8
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
34A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
11.71 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
11nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1100pF @ 20V
Nguvu - Max :
23W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
PowerPAK® 1212-8 Dual
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® 1212-8 Dual
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