Vishay Semiconductor Diodes Division - BYG10KHM3_A/I

KEY Part #: K6439667

BYG10KHM3_A/I Bei (USD) [610372pcs Hisa]

  • 1 pcs$0.06060
  • 15,000 pcs$0.05270

Nambari ya Sehemu:
BYG10KHM3_A/I
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE AVALANCHE 800V 1.5A DO214. Rectifiers 1.5A,800V SMA AVAL AEC-Q101 Qualified
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Rectifiers - Moja, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Ushirikiano uliopangwa, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCR and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division BYG10KHM3_A/I electronic components. BYG10KHM3_A/I can be shipped within 24 hours after order. If you have any demands for BYG10KHM3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10KHM3_A/I Sifa za Bidhaa

Nambari ya Sehemu : BYG10KHM3_A/I
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE AVALANCHE 800V 1.5A DO214
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya Diode : Avalanche
Voltage - DC Reverse (Vr) (Max) : 800V
Sasa - Wastani Aliyerekebishwa (Io) : 1.5A
Voltage - Mbele (Vf) (Max) @ Kama : 1.15V @ 1.5A
Kasi : Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 4µs
Sasa - Rejea kuvuja @ Vr : 1µA @ 800V
Uwezo @ Vr, F : -
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214AC, SMA
Kifurushi cha Kifaa cha Mtoaji : DO-214AC (SMA)
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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