Vishay Semiconductor Diodes Division - EGF1BHE3_A/H

KEY Part #: K6457354

EGF1BHE3_A/H Bei (USD) [460696pcs Hisa]

  • 1 pcs$0.08029

Nambari ya Sehemu:
EGF1BHE3_A/H
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 100V 1A DO214BA. Rectifiers 1A,100V,50NS AEC-Q101 Qualified
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Thyristors - TRIAC, Thyristors - DIAC, SIDAC, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCR and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division EGF1BHE3_A/H electronic components. EGF1BHE3_A/H can be shipped within 24 hours after order. If you have any demands for EGF1BHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGF1BHE3_A/H Sifa za Bidhaa

Nambari ya Sehemu : EGF1BHE3_A/H
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 100V 1A DO214BA
Mfululizo : Automotive, AEC-Q101, Superectifier®
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Sasa - Wastani Aliyerekebishwa (Io) : 1A
Voltage - Mbele (Vf) (Max) @ Kama : 1V @ 1A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 50ns
Sasa - Rejea kuvuja @ Vr : 1µA @ 100V
Uwezo @ Vr, F : 15pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214BA
Kifurushi cha Kifaa cha Mtoaji : DO-214BA (GF1)
Joto la Kufanya kazi - Junction : -65°C ~ 175°C

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