Vishay Semiconductor Diodes Division - ES3GHE3_A/H

KEY Part #: K6442903

ES3GHE3_A/H Bei (USD) [209688pcs Hisa]

  • 1 pcs$0.17639
  • 1,700 pcs$0.13289

Nambari ya Sehemu:
ES3GHE3_A/H
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 400V 3A DO214AB. Rectifiers 400 Volt 3.0A 35ns Glass Passivated
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Thyristors - SCR, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Moja, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Thyristors - TRIAC and Viwango - Zener - Moja ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division ES3GHE3_A/H electronic components. ES3GHE3_A/H can be shipped within 24 hours after order. If you have any demands for ES3GHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES3GHE3_A/H Sifa za Bidhaa

Nambari ya Sehemu : ES3GHE3_A/H
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 400V 3A DO214AB
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 400V
Sasa - Wastani Aliyerekebishwa (Io) : 3A
Voltage - Mbele (Vf) (Max) @ Kama : 1.1V @ 3A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 50ns
Sasa - Rejea kuvuja @ Vr : 10µA @ 400V
Uwezo @ Vr, F : 30pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214AB, SMC
Kifurushi cha Kifaa cha Mtoaji : DO-214AB (SMC)
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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