ON Semiconductor - NSVBC124EPDXV6T1G

KEY Part #: K6528890

NSVBC124EPDXV6T1G Bei (USD) [1133179pcs Hisa]

  • 1 pcs$0.03264

Nambari ya Sehemu:
NSVBC124EPDXV6T1G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
SS SOT563 DUAL RSTR XSTR.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Viwango - Zener - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Moduli, Thyristors - SCR, Viwango - RF, Transistors - IGBTs - Moja and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
We specialize in ON Semiconductor NSVBC124EPDXV6T1G electronic components. NSVBC124EPDXV6T1G can be shipped within 24 hours after order. If you have any demands for NSVBC124EPDXV6T1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSVBC124EPDXV6T1G Sifa za Bidhaa

Nambari ya Sehemu : NSVBC124EPDXV6T1G
Mzalishaji : ON Semiconductor
Maelezo : SS SOT563 DUAL RSTR XSTR
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya Transistor : 1 NPN, 1 PNP - Pre-Biased (Dual)
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 22 kOhms
Upinzani - Base ya Emitter (R2) : 22 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : -
Nguvu - Max : 339W
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SOT-563, SOT-666
Kifurushi cha Kifaa cha Mtoaji : SOT-563