Micron Technology Inc. - MT29F2G16ABBEAH4-AAT:E TR

KEY Part #: K938191

MT29F2G16ABBEAH4-AAT:E TR Bei (USD) [19516pcs Hisa]

  • 1 pcs$2.34790

Nambari ya Sehemu:
MT29F2G16ABBEAH4-AAT:E TR
Mzalishaji:
Micron Technology Inc.
Maelezo ya kina:
IC FLASH 2G PARALLEL FBGA. NAND Flash SLC 2G 128MX16 FBGA
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Linear - Amplifiers - Sauti, PMIC - Usajili wa Voltage - DC DC Kubadilisha Regu, Linear - Amplifiers - Amps za Video na Moduli, Iliyoingizwa - Microcontrollers, Upataji wa data - ADC / DACs - Kusudi Maalum, Mantiki - Msajili wa Shift, Upataji wa data - Kidhibiti cha Skrini ya Kugusa and Maingiliano - Mabadiliko ya Analog - Kusudi Maalum ...
Faida ya Ushindani:
We specialize in Micron Technology Inc. MT29F2G16ABBEAH4-AAT:E TR electronic components. MT29F2G16ABBEAH4-AAT:E TR can be shipped within 24 hours after order. If you have any demands for MT29F2G16ABBEAH4-AAT:E TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MT29F2G16ABBEAH4-AAT:E TR Sifa za Bidhaa

Nambari ya Sehemu : MT29F2G16ABBEAH4-AAT:E TR
Mzalishaji : Micron Technology Inc.
Maelezo : IC FLASH 2G PARALLEL FBGA
Mfululizo : Automotive, AEC-Q100
Hali ya Sehemu : Active
Aina ya kumbukumbu : Non-Volatile
Fomati ya kumbukumbu : FLASH
Teknolojia : FLASH - NAND
Saizi ya kumbukumbu : 2Gb (128M x 16)
Usafirishaji wa Saa : -
Andika Wakati wa Msaada - Neno, Ukurasa : -
Wakati wa Upataji : -
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.95V
Joto la Kufanya kazi : -40°C ~ 105°C (TA)
Aina ya Kuinua : -
Kifurushi / Kesi : -
Kifurushi cha Kifaa cha Mtoaji : -

Unaweza pia Kuvutiwa Na
  • AT27C4096-90PU

    Microchip Technology

    IC EPROM 4M PARALLEL 40DIP. EPROM 4Mb (256Kx16) OTP 5V 90ns

  • 71V3576S150PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP.

  • 71V3577S75PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP. SRAM 4M 3.3V I/O PBSRAM SLOW X

  • W94AD2KBJX5I

    Winbond Electronics

    IC DRAM 1G PARALLEL 90VFBGA. DRAM 1G mDDR, x32, 200MHz, Ind temp

  • W979H2KBVX2I

    Winbond Electronics

    IC DRAM 512M PARALLEL 134VFBGA. DRAM 512Mb LPDDR2, x32, 400MHz, -40 85C

  • TC58BYG2S0HBAI4

    Toshiba Memory America, Inc.

    4GB SLC BENAND 24NM BGA 9X11 EE. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)