ON Semiconductor - NSBA113EDXV6T1G

KEY Part #: K6529306

NSBA113EDXV6T1G Bei (USD) [899676pcs Hisa]

  • 1 pcs$0.04111
  • 8,000 pcs$0.03862

Nambari ya Sehemu:
NSBA113EDXV6T1G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
TRANS 2PNP PREBIAS 0.25W SOT563.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moduli, Viwango - Bridge Rectifiers, Thyristors - DIAC, SIDAC, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Thyristors - SCR and Transistors - FET, MOSFETs - Moja ...
Faida ya Ushindani:
We specialize in ON Semiconductor NSBA113EDXV6T1G electronic components. NSBA113EDXV6T1G can be shipped within 24 hours after order. If you have any demands for NSBA113EDXV6T1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSBA113EDXV6T1G Sifa za Bidhaa

Nambari ya Sehemu : NSBA113EDXV6T1G
Mzalishaji : ON Semiconductor
Maelezo : TRANS 2PNP PREBIAS 0.25W SOT563
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : 2 PNP - Pre-Biased (Dual)
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 1 kOhms
Upinzani - Base ya Emitter (R2) : 1 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 3 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic : 250mV @ 5mA, 10mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : -
Nguvu - Max : 250mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji : SC-88/SC70-6/SOT-363

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