SIHB120N60E-GE3 Bei (USD) [16124pcs Hisa]
- 1 pcs$2.55606
- Nambari ya Sehemu:
- SIHB120N60E-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CHAN 650V D2PAK TO-263.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - RF, Viwango - Zener - Moja, Thyristors - SCRs - Moduli, Transistors - IGBTs - Arrays, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Moja and Thyristors - SCR ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIHB120N60E-GE3 electronic components. SIHB120N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB120N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB120N60E-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIHB120N60E-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CHAN 650V D2PAK TO-263
Mfululizo :
E
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
25A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
120 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1562pF @ 100V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
179W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D²PAK (TO-263)
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Habari mpya kabisa
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