[13871pcs Hisa]
- Nambari ya Sehemu:
- TPCF8B01(TE85L,F,M
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET P-CH 20V 2.7A VS-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Viwango - Bridge Rectifiers, Thyristors - SCR, Viwango - Rectifiers - Arrays, Thyristors - DIAC, SIDAC, Viwango - Zener - Arrays, Transistors - Ushirikiano uliopangwa and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TPCF8B01(TE85L,F,M electronic components. TPCF8B01(TE85L,F,M can be shipped within 24 hours after order. If you have any demands for TPCF8B01(TE85L,F,M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPCF8B01(TE85L,F,M Sifa za Bidhaa
Nambari ya Sehemu :
TPCF8B01(TE85L,F,M
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET P-CH 20V 2.7A VS-8
Mfululizo :
U-MOSIII
Hali ya Sehemu :
Obsolete
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2.7A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.8V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
110 mOhm @ 1.4A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 200µA
Malango ya Lango (Qg) (Max) @ Vgs :
6nC @ 5V
Vgs (Max) :
±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
470pF @ 10V
Makala ya FET :
Schottky Diode (Isolated)
Kuondoa Nguvu (Max) :
330mW (Ta)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
VS-8 (2.9x1.5)
Kifurushi / Kesi :
8-SMD, Flat Lead
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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