IXYS - IXFX26N120P

KEY Part #: K6394611

IXFX26N120P Bei (USD) [4421pcs Hisa]

  • 1 pcs$11.32395
  • 30 pcs$11.26761

Nambari ya Sehemu:
IXFX26N120P
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH 1200V 26A PLUS247.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja, Viwango - RF, Transistors - FET, MOSFETs - Moja, Viwango - Zener - Moja, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - Arrays and Thyristors - SCR ...
Faida ya Ushindani:
We specialize in IXYS IXFX26N120P electronic components. IXFX26N120P can be shipped within 24 hours after order. If you have any demands for IXFX26N120P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFX26N120P Sifa za Bidhaa

Nambari ya Sehemu : IXFX26N120P
Mzalishaji : IXYS
Maelezo : MOSFET N-CH 1200V 26A PLUS247
Mfululizo : HiPerFET™, PolarP2™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 1200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 26A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 500 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id : 6.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 225nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 16000pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 960W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PLUS247™-3
Kifurushi / Kesi : TO-247-3